Role of electrode metallization in performance of semi-insulating GaAs radiation detectors
NIM A 576 (2007) 87–89
In the present work, a comparative study of semi-insulating (SI) GaAs radiation detectors with different blocking (Schottky) and ohmic contact metallization is presented. The detectors fabricated from ‘‘detector-grade’’ bulk SI GaAs are characterized by current–voltage measurements and their detection performance is evaluated from pulse-height spectra of 241Am and 57Co g-sources. Observed results are evaluated and discussed. Importance of the optimized electrodes technology of SI GaAs detector with good performance is demonstrated.
Cite article as:
S. Pospíšil, "Role of electrode metallization in performance of semi-insulating GaAs radiation detectors", NIM A 576 (2007) 87–89 (2007)