Silicon planar MESA diodes as radiation detectors
||Universite de Montreal, Montreal (Quebec), Canada H3C 3J7
Nuclear Instruments and Methods in Physics Research A 476 (2002) 588–595
Silicon diodes built according to the planar MESA process are investigated for their possible use as radiation detectors. Electrical characteristics of planar MESA (PM) detectors are studied as a function of applied bias voltage and 10 MeV proton fluence in view of possible application in high-radiation environment. A comparison is made between the features of PM and silicon standard planar (SP) detectors.
Cite article as:
M. Stafford, "Silicon planar MESA diodes as radiation detectors", Nuclear Instruments and Methods in Physics Research A 476 (2002) 588–595 (2002)