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Publication  > Articles in Impacted Journals  > 'Radiation hardness properties of full-3D active edge silicon sensors'
Radiation hardness properties of full-3D active edge silicon sensors

Author

Year
2008

Scientific journal
NIM A 587 (2008) 243–249

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Abstract
Full-three-dimensional (3D) pixel sensors, with electrodes penetrating through the entire silicon wafer, were fabricated at the Stanford Nanofabrication Facility, Stanford, California, USA. They have 71-μm-inter-electrode spacing, active edges and a compatible geometry to the ATLAS pixel detector readout electronics. Several samples were irradiated with neutrons to different doses up to an equivalent fluence of 8.6×1015 n1 MeVeq cm−2. This corresponds to the integrated fluence expected after 5 years at the Large Hadron Collider (LHC) with a luminosity of 1035 cm−2 s−1 at 4 cm from the interaction point, where the ATLAS B-Layer is placed. Before and after irradiation, signals were generated by a 1060 nm infrared laser calibrated to inject a charge of 14 fC. This corresponds to 3.5 minimum ionizing particles and should not perturb the charge status of the radiation-induced defects. After 8.6×1015 n1 MeVeq cm−2 the signal collected was 38% and corresponded to 7200e− for a substrate thickness of 235 μm. Signal efficiency, radiation-induced leakage current and related damage parameters are discussed here and compared with simulations. Full-3D silicon detectors with active edges are being considered for forward proton tagging at the LHC, for the ATLAS pixel B-layer replacement and for the ATLAS pixel upgrade.

Cite article as:
S. Pospíšil, "Radiation hardness properties of full-3D active edge silicon sensors", NIM A 587 (2008) 243–249 (2008)

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