IEAP - Institute of Experimental and Applied Physics CTU - Czech Technical University in Prague
Česky English
IEAP - Institute of Experimental and Applied Physics CTU - Czech Technical University in Prague
CTU - Czech Technical University in Prague
Publication  > Articles in Impacted Journals  > 'Correlation of electrical and optical properties with charge collection efficiency of In-doped and In+Si co-doped CdTe'
Correlation of electrical and optical properties with charge collection efficiency of In-doped and In+Si co-doped CdTe

Author
Höschl Pavel Faculty of Mathematics and Physics, Institute of Physics, Charles University, Ke Karlovu 5, Prague 2, CZ-121 16, Czech Republic

Year
2008

Scientific journal
NIM A

Web


Abstract
The effect of Si co-doping on electrical, optical and spectroscopic properties of In-doped CdTe was investigated. The concentration of Si atoms in the charge was 1×1017 cm−3. All Si co-doped samples were n-types, with the resistivity higher than 1×109 Ω cm. The dominant deep level ED=0.67 eV was determined by temperature dependence of the Hall effect measurement and compared with the low-temperature photoluminescence. Cd-rich or Te-rich annealing was used to eliminate this deep level, which strongly affects the charge collection efficiency of samples. The deep level together with a poor charge collection efficiency were found in both as-grown or annealed Si co-doped samples contrary to samples with only In doping, where the detector quality improvement was observed after Te-rich annealing.

Cite article as:
P. Höschl, "Correlation of electrical and optical properties with charge collection efficiency of In-doped and In+Si co-doped CdTe", NIM A (2008)

Search
10th Anniversary of IEAP